Date of Award
5-1-1993
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
Department
Physics & Astrophysics
Abstract
The I-V characteristics of the Bismuth Tellurium Sulfide (BTS) thin films were measured at low temperatures. The thin film was constructed in a configuration of field effect transistor (FET) and it has the thickness of only five atomic layers.A linear correspondence was observed between the conductance at high electric field and low temperature and the conductance at finite temperature with zero electric field. From this relationship the localization length of the sample was calculated. In the case of finite temperature and electric field, a good numerical fitting with an empirical formula was obtained. A physical explanation for the empirical formula was established. It turned out that at high electric fields the conductance is mainly determined by the electron temperature. The scaling result of BTS thin films is in agreement of Kaveh's two parameter scaling theory which suggests that two conduction mechanisms operate simultaneously in our case, the hopping mechanism and the diffusion mechanism.
Recommended Citation
Liu, Gong, "The temperature and electric field effect on the bismuth tellurium sulfide thin films in the strong localization regime." (1993). Theses and Dissertations. 8755.
https://commons.und.edu/theses/8755