Document Type

Article

Publication Date

3-7-2019

Publication Title

Journal of Physical Chemistry C

Volume

123

Abstract

Recently, silicene, the graphene equivalent of silicon, has attracted a lot of attention due to its compatibility with Si-based electronics. So far, silicene has been epitaxy grown on various crystalline surfaces such as Ag(110), Ag(111), Ir(111), ZrB2(0001) and Au(110) substrates. Here, we present a new method to grow silicene via high temperature surface reconstruction of hexagonal IrSi3 nanocrystals. The h-IrSi3 nanocrystals are formed by annealing thin Ir layers on Si(111) surface. A detailed analysis of the STM images shows the formation of silicene like domains on the surface of some of the IrSi3 crystallites. We studied both morphology and electronic properties of these domains by using both scanning tunneling microscopy/spectroscopy and first-principles calculation methods.

Issue

12

First Page

7225

Last Page

7229

DOI

10.1021/acs.jpcc.9b00550

ISSN

1932-7455

Rights

This document is the unedited author’s version of a submitted Work that was subsequently accepted for publication in Journal of Physical Chemistry C, copyright ©2019 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.jpcc.9b00550

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